B4: Lateral transport in all-oxide field-effect structures
The influence of piezoelectric coupling at interfaces within oxide heterostructures on their electric and electronic properties will be investigated and exploited in demonstrator devices. The focus is laid on coupling effects at the (Mg,Zn)O/ZnO interface for which the coupling is due to the spontaneous and the piezoelectric polarization, respectively. In order to determine the proportion of these to parts to the total polarization of a respective layer we will grow (Mg,Zn)O heterostructures with different crystallographic orientation and in addition will alter the layer sequence. The piezoelectric polarization is due to strain within the heteroepitaxial layers and can be analyzed by structural investigation. The coupling strength can itself be determined from the density of the two-dimensional electron gas forming at the (Mg,Zn)O/ZnO interface. On the basis of these results it will be possible to exploit the polarization-induced coupling for designing devices like transparent high electron mobility transistors that shall be realized and optimized within this funding period.
Principal Investigators
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Dr. Holger von Wenckstern ⇒
phone: +49 (0) 341/97 32604 |
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Prof. Dr. Marius Grundmann ⇒
grundmann@physik.uni-leipzig.de phone: +49 (0) 341/97 32651 |
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